Dea Fackovic Volcanjk

While the demand for artificial intelligence, machine learning, and the Internet of Things is skyrocketing, today’s silicon transistors (“building blocks of electronics”) face fundamental scaling limits, leading to performance degradation and efficiency loss. Atomically thin two-dimensional (2D) semiconductors have emerged as promising candidates to complement or even replace silicon. However, one of the key challenges in realizing their full potential in future nanoelectronics is their successful integration with high-quality gate dielectrics (“that enable on/off switching of transistors”). My research focuses on advancing next-generation semiconductor devices by engineering ultrathin dielectric layers on 2D materials using atomic layer deposition (ALD). By integrating principles from chemistry, chemical engineering, electrical engineering, and materials science, I am developing scalable, industry-compatible ALD processes to support continued device miniaturization and enhanced performance.